Figure 4.

Temperature dependences of real, C′ (a,b), and imaginary, C″ (c,d), parts of the complex capacitance of SbSI sample measured at decade stepped frequencies within ${10}^0\le f\le {10}^6$ Hz during heating (a,c) and cooling (b,d) run, respectively. For the sake of clarity, only every fifth experimental point is shown. The inset shows the C′(T) dependence for 1 MHz.