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. 2022 Feb 11;12(4):610. doi: 10.3390/nano12040610

Figure 1.

Figure 1

(a) CV of Cd2+ and Se (IV) solution on n-Si in sulfuric acid between −0.2 V to −0.95 V, scan rate 10 mV/s. (b) Dependence between applied potential and time required for a 30 mC deposition. needed for the deposition; (c) Linear stripping voltammetry of the samples obtained at various potentials between the deposition potential and −0.3 V, scan rate 10 mv/s.