Table 2.

Obtained binding energies for MoS₂ and MoS_2-xN_x films grown on c-Al₂O₃ substrate

	MoS2/c-Al2O3	MoS2-xNx/c-Al2O3
S 2p3/2	∼162.5 eV	∼162.1 eV
Mo 3d5/2	∼229.5 eV	∼228.7 eV
N 1s	–	∼397 eV
Work-function	∼4.67 eV	∼4.85 eV
Valance band maxima	∼1.8 eV	∼‒0.13 eV