Figure 4.

a) Shot‐noise‐limited D ^* under reverse biases of the device comprising 4.0 wt% BDP‐OMe. b) J–V characteristics in the dark and under 100 mW cm^–2 illumination of two different optimized PV‐OPDs (pin‐ and nip‐architecture) and optimized PM‐OPD. c) Comparison of the same devices shown in (b) in terms of R and D ^*. The R is calculated from the EQE measured at different voltages and fitted with a polynomial function at 780 nm, from which the D ^* is computed.