Figure 7.

Emerging technologies in 2D materials and heterostructures

(A) Schematic of a MoS₂ memtransistor (Kalita et al., 2019). Copyright 2019, Springer Nature.

(B) Logic-in-memory in MoS₂ devices (Bertolazzi et al., 2013). Copyright 2013, American Chemical Society.

(C) Spin-logic with nonvolatile magnetic memory (Khokhriakov et al., 2021).

(D) Excitions on WSe₂ in heterostructure with a 2D magnet (Mukherjee et al., 2020). Copyright 2020, Springer Nature.

(E) Room temperature spin-valve with 2D magnets (Zhao et al., 2021).

(F) Spin galvanic effect in 2D materials heterostructure (Khokhriakov et al., 2020). Copyright 2020, Springer Nature.

(G) Charge-spin conversion in WTe₂ (Zhao et al., 2020). Copyright 2020, Wiley.

(H) Moiré ferroelectric with a twist angle between the hBN layers (Yasuda et al., 2021). Copyright 2020, AAAS