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. 2022 Mar 9;13:1228. doi: 10.1038/s41467-022-28860-1

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© The Author(s) 2022

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — a Polarization P vs. electric field E_a characteristics of a TiN/ZrO₂(10 nm)/TiN capacitor measured using a standard ferroelectric tester at 1 kHz. b Low magnification high angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) image of the cross-section of a representative TiN/HfO₂/Al₂O₃/ZrO₂/TiN heterostructure grown on Si showing all the layers distinguishable with clear interfaces. Fast Fourier transforms of high magnification HAADF-STEM images of the same sample show amorphous rings in the HfO₂ layer and discrete diffraction spots in the ZrO₂ layer consistent with the tetragonal <010> zone axis.