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. 2022 Mar 3;15(5):1888. doi: 10.3390/ma15051888

Figure 9.

Figure 9

Schematic of the bonding mechanism with non-uniform bonding surfaces in a Cu/SiO2 hybrid system. (a) Sides with Cu bumps in SiO2 via. The non-uniformity (dish shape) on Cu surface is generated after the CMP process (b) Alignment and bonding of SiO2 to SiO2 at room temperature with dishing Cu. (c) The periphery of the Cu vias can be well-bonded after high temperature annealing. No external pressure is needed at the third stage.