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. 2022 Feb 22;12(5):741. doi: 10.3390/nano12050741

Figure 18.

Figure 18

(a) Cross-sectional STEM image of the InP-on-Si template to demonstrate the generation and propagation of threading dislocations and stacking faults; (b) Extracted dislocation density as a function of the InP buffer thickness at various growth stages. (c) Typical ECCI image of the InP surface, where different kinds of defects can be identified and counted. Reprinted with permission from ref. [107]. Copyright 2020American Institute of Physics.