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Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
Four epitaxial schemes of InP on patterned Si using ART: (a) direct InP epitaxy on V-grooved Si; (b) InP on rounded Ge surface; (c) InP on a GaAs intermediate buffer filling up the V-grooves; (d) InP on a few–nanometer–thick GaAs stress relaxing layer.