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. 2022 Feb 22;12(5):741. doi: 10.3390/nano12050741

Figure 26.

Figure 26

Four epitaxial schemes of InP on patterned Si using ART: (a) direct InP epitaxy on V-grooved Si; (b) InP on rounded Ge surface; (c) InP on a GaAs intermediate buffer filling up the V-grooves; (d) InP on a few–nanometer–thick GaAs stress relaxing layer.