Table 2.
Parameters of BHJ devices under illumination.
Layer | VOC [mV] | JSC [mA/cm2] | FF | PCE [%] | Rs [Ω] | Rsh [kΩ] |
---|---|---|---|---|---|---|
neat | 465.2 ± 21.1 | 9.94 ± 0.91 | 0.48 ± 0.01 | 2.24 ± 0.29 | 354.89 ± 39.55 | 5.18 ± 0.75 |
5% I2 | 394.2 ± 4.4 | 12.95 ± 0.59 | 0.46 ± 0.02 | 2.41 ± 0.19 | 240.10 ± 33.59 | 3.87 ± 0.78 |
10% I2 | 405.1 ± 6.1 | 14.18 ± 0.59 | 0.44 ± 0.01 | 2.61 ± 0.13 | 246.69 ± 26.41 | 4.24 ± 0.88 |
VOC—open circuit voltage, JSC—short circuit current density, FF—fill factor, PCE—power. conversion efficiency, Rs—series resistance, Rsh—shunt resistance.