Table 1.

The parameters of the photovoltaic device utilized in these simulations, including the initial estimation of the doping concentrations and thicknesses of each layer, which will be improved in the subsequent stages.

Physical Parameters	Symbol	Unit	PEDOT:PSS	PTB7:PC70BM	PFN-Br
Thickness	Th	Nm	-	250	250
Energy Band Gap	Eg	eV	1.6	0.9	2.98
Electron Affinity	Χ	eV	3.5	3.7	4
Dielectric Permittivity (Relative)	Ε	-	3	3.9	5
Effective Density of States at Valence Band	NV	cm−3	1 × 1022	1 × 1018	1 × 1019
Effective Density of States at Conduction Band	NC	cm−3	1 × 1022	1 × 1018	1 × 1019
Hole Thermal Velocity	Ve	cm/s	1 × 107	1 × 107	1 × 107
electron Thermal Velocity	Vh	cm/s	1 × 107	1 × 107	1 × 107
Electron Mobility	μe	cm2/V.s	0.01	5.00 × 10−4	1.00 × 10−4
Hole Mobility	μh	cm2/V.s	9.9 × 10−0.5	5.00 × 10−4	2.00 × 10−6
Uniform Shallow Donor Doping	Nd	cm−3	0.00	1 × 1019	-
Uniform Shallow Acceptor Doping	Na	cm−3	-	1 × 1019	0
Defect Density	Nt	cm−3	1 × 1015	1 × 1015	1 × 1015
References			[35]	[36,37]	[38]