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. 2022 Mar 17;13:1428. doi: 10.1038/s41467-022-29053-6

Fig. 5. Calculated electron and hole g-factors in MAPbI3.

Fig. 5

a and c The calculated electron and hole g-factors in tetragonal MAPbI3 as a function of the tetragonal crystal field (CF), δ, with orthorhombic CF ζ=0. b and d The electron and hole g-factors in orthorhombic MAPbI3 for fixed tetragonal CF δ=+349.8 meV, determined by fit to the measured g-factors, as a function of the orthorhombic CF, ζ. The best-fit value for ζ is +147.7 meV, marked in panels (b, d) with a vertical dashed black line. The subscripts x, y and z on the g-factor components denote the [1,0,0], [0,1,0] and [0,0,1] crystallographic directions. In the calculations shown, the bandgap Eg, the SOC split-off parameter Δ, the Kane energy Ep, and Luttinger’s magnetic parameter κ have the values shown in Table 1. From the values plotted, the g-factors along the [11¯0] direction are obtained as29 g[11¯0]e=1/2gxe2+1/2gye2; g[11¯0]h=1/2gxh2+1/2gyh2.