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. 2022 Jan 28;9(9):2105142. doi: 10.1002/advs.202105142

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© 2022 The Authors. Advanced Science published by Wiley‐VCH GmbH

This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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a) DLTS signals from the Control and C‐420 Sb₂Se₃ devices, b) The corresponding Arrhenius plots obtained from DLTS signals. c,d) Conduction (E _C) and valence (E _V) band edges, Fermi level (E _F) and defect energy levels of the Control and C‐420 samples, respectively. e) Time‐resolved absorption spectra obtained at various time delays after photoexcitation for the Control and C‐420 Sb₂Se₃ thin films. f) Transient kinetic traces showing the decay of the PIA peak at 750 nm for both thin films.