Table 1.

Device performance parameters based on Sb₂Se₃ absorber layer with different post‐selenization conditions

Devices	V OC [V]	J SC [mA cm−2]	FF [%]	PCE [%]
Control	0.312	22.72	34.02	2.41
C‐380	0.424	22.57	47.41	4.53
C‐400	0.478	25.69	44.33	5.44
C‐420	0.513	24.56	58.74	7.40
C‐440	0.478	20.26	55.54	5.47