Table 2.
A comparison of photovoltaic parameters of Sb2Se3 devices prepared via different methods
| Method | Device configuration | PCE [%] | V OC [V] | J SC [mA cm−2] | FF [%] | V OC, def [V] E g /q−V OC | Ref. |
|---|---|---|---|---|---|---|---|
| VTD a) | ITO/CdS/Sb2Se3/Au | 7.60 | 0.420 | 29.90 | 60.40 | 0.770 | Tang[ 9 ] |
| VTD a) | Mo/Sb2Se3/In2S3/ZnO/ITO | 5.35 | 0.370 | 28.22 | 51.90 | 0.820 | Tang[ 37 ] |
| MSD‐Se b) | Mo/Sb2Se3/CdS/ITO/Ag | 6.06 | 0.494 | 25.91 | 47.70 | 0.716 | Liang[ 18 ] |
| MSD‐Sb‐Se c) | Mo/Sb2Se3/CdS/ITO/Ag | 6.84 | 0.504 | 24.91 | 54.47 | 0.651 | Liang[ 21 ] |
| VTD a) | Mo/Sb2Se3/CdS/ITO/Ag | 2.41 | 0.312 | 22.72 | 34.02 | 0.833 | This work |
| VTD‐Se d) | Mo/Sb2Se3/CdS/ITO/Ag | 7.40 | 0.513 | 24.56 | 58.74 | 0.647 | This work |
a)
Vapor transport deposition
b)
Sputtering Sb2Se3 and post‐selenization
c)
Sputtering Sb precursor and post‐selenization
d)
Vapor transport deposition Sb2Se3 and post‐selenization.