Table 3.

Summary of heterojunction and interface associated photovoltaic parameters of the Sb₂Se₃ devices

Devices	J 0 [mA cm−2]	A	V TFL [V]	N trap [cm−3]	E a [eV]	R s [Ω cm2]	V bi [V]	N i [cm−3]
Control	–	–	–	–	0.507	2.85	–	–
C‐400	2.24 × 10−2	2.73	0.33	2.45 × 1014	1.09	1.92	0.565	1.04 × 1016
C‐420	4.75 × 10−3	1.94	0.25	1.85 × 1014	1.14	1.79	0.670	2.24 × 1015