. 2022 Mar 15;7(12):10049–10055. doi: 10.1021/acsomega.1c06009

Table 1. Comparison of the Photodetector Parameters Based on MoTe₂–MoS₂ Heterostructure Devices.

materials	thickness (nm)	λ (nm)	bias voltage (V)	R (mA W^–1)	ref
MoTe₂–MoS₂	6.7/74.4	532	0	111	this work
MoTe₂–MoS₂	3.3/7.0	637	0	46	(21)
MoTe₂–MoS₂	1.5/3.8	473	2	64	(27)
MoTe₂–MoS₂	6.4/7.6	633	0	150	(28)
MoTe₂–MoS₂	2.2/2.2	470	5	322	(29)

Table 1. Comparison of the Photodetector Parameters Based on MoTe2–MoS2 Heterostructure Devices.