Extended Data Fig. 5 |. Nanocellulose-based all-carbon TFT electrical characterization.

a, Subthreshold curves at varying drain-sourcevoltages (V_ds) demonstrating the optimization of on/off-current ratio at a V_ds of −0.5 V. b) Output curves at varying gate voltages. A clear shift in conduction pathway can be seen at increasingly positive V_gs where carriers are now tunneling through the Schottky barrier into the conduction band rather than the lower-barrier injection of carriers into the valence band at negative gate bias. The transistors were fabricated with a 0.15 mM salt concentration in crystalline nanocellulose and tested with a sweep frequency of 10 ms.