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. 2022 Apr 1;13:1741. doi: 10.1038/s41467-022-29434-x

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© The Author(s) 2022, corrected publication 2022

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Fig. 1 — a TFT structure used in this work. b Transfer characteristics of the TFTs with different perovskite channel layers. I_G: gate leakage current. c Hysteresis statistics of different TFTs. The error bars present standard errors calculated from ten devices per type, and the mean values are labelled. d Histogram of the extracted mobilities from the transfer characteristics under different scan directions. The error bars present standard errors calculated from ten devices per type. The inset shows the variation ratio of the mobility values extracted from reverse (μ_Rev) and forward (μ_For) scans, calculated by (μ_Rev − μ_For)/μ_Rev × 100%.