The carrier concentration (N_d) and flat band potential (E_fb) of oxide films formed on CS in different Zn²⁺ and Al³⁺ injection conditions.

Group	Semiconductor type	N d (cm−3)	E fb (V)
T (blank)	n	2.10 × 1017	−0.14
T (20Zn)	n	5.37 × 1016	−0.43
T (40Zn)	n	3.42 × 1017	−0.46
T (30Al)	n	1.76 × 1017	−0.79
T (20Zn + 20Al)	n	1.73 × 1017	−0.32