Fig. 5. (a) Optical microscopy image of MoS2 back gate field effect transistor with channel length 6 μm (scale bar 20 μm). (b) Transfer characteristic of individual triangular MoS2 domains with fixed bias voltage (Vds) 10 V (for continuous MoS2 films, transfer characteristic shown in inset). Photosensor characteristics of in situ O2 processed continuous MoS2 films; (c) camera image of large area MoS2 photosensor array in centimetre dimension (channel length = 125 μm), (d) photocurrent variation with different laser power, (e) responsivity of the device with different laser power, (f) average responsivity of the MoS2 films shown at fixed power of 1.4 × 10−4 W cm−2.
