Fig. 5.

a The coulombic efficiency of the Zn plating/stripping at 1 mA cm⁻² with the fixed capacity of 1 mAh cm⁻² in Zn|Cu cells; b voltage profiles of Zn plating/stripping process on the copper mesh; c Rate galvanostatic cycling of Zn|Zn symmetrical cell at 1, 2, 5, and 10 mA cm⁻² with the capacity of 1 mAh cm⁻²; d–i long-term galvanostatic cycling of Zn|Zn symmetrical cell at 2 mA cm⁻² (d–e), 5 mA cm⁻² (f–g) and 10 mA cm⁻² (h–i) with the fixed capacity of 1 mAh cm⁻². e, g, i are the magnified curves of the selected time (i.e., the dotted rectangles) in (d, f, h), respectively