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. 2022 Apr 23;102(3):535–549. doi: 10.1007/s10971-022-05787-z

Table 3.

Characteristics of the tin oxide modified SG4 glaze samples and data from the Langmuir-Hinshelwood kinetic model in photodegradation test on Orange II (D: direct semiconductor, I: indirect semiconductor)

SnO2 (w%) Eg (eV) Langmuir-Hinshelwood Kinetic
t1/2 (min.) R2
anatase 3.0 (I) 42 0.991
SG4 3.8 (D) 77 0.995
0.5 3.8 (D) 77 0.993
2 3.8 (D) 75 0.995
5 3.7 (D) 58 0.996
CONTROL ------ 151 0.993