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. Author manuscript; available in PMC: 2022 Apr 25.
Published in final edited form as: Nat Rev Methods Primers. 2021 Oct 7;1:66. doi: 10.1038/s43586-021-00065-8

Fig. 4 |. Fabrication of EGTs.

Fig. 4 |

Fabrication of side-gated electrolyte-gated transistor (EGT). a | Conventional fabrication utilizing common deposition methods for semiconductor film growth and photolithography for selective patterning of the semiconductor and electrodes. Necessary equipment includes spin-coater, mask aligner, vacuum deposition chamber and vacuum evaporator chamber. Photolithography is typically performed on silicon, glass, ceramic and plastic substrates. Miniaturized devices with high-resolution features can be obtained. b | Unconventional fabrication utilizing additive processes including screen printing, aerosol jet printing and inkjet printing. Necessary equipment includes aerosol jet, inkjet, gravure and/or screen printer. Printing methods are suitable for glass, ceramic, plastic, textile and paper substrates. Fabricated devices can be flexible, wearable, on a large area and of low cost.