Fig. 3. (A) Photothermal conversion profiles of PBS, UCNPs@Bi@SiO2, and UCNPs@Bi@SiO2 lips upon CW NIR laser exposure (808 nm, 500 mW cm−2). (B) Photothermal conversion profiles of UCNPs@Bi@SiO2 over 5 cycles of NIR on/off. (C) Photothermal conversion profiles of UCNPs@Bi@SiO2 lips over 5 cycles of NIR on/off. (D) In vitro GE release profiles from UCNPs@Bi@SiO2@GE HP-lips with/without intermittent NIR exposure. Red-marked pattern indicated the release of GE from UCNPs@Bi@SiO2@GE HP-lips under periodically controlled on/off of CW NIR laser exposure and every duration of NIR irradiation is 20 min. Black-marked pattern indicated the release of GE from UCNPs@Bi@SiO2@GE HP-lips without CW NIR laser exposure.
