PV parameters summary of the devices considered in this subsection.

Device	V OC (V)	J SC (mA cm−2)	FF (%)	PCE (%)
Top cell (336 nm)	1.28	20.11	79.90	20.58
Bottom cell (150 μm)	0.75	34.76	85.41	22.35
Bottom cell under filtered spectrum by top cell (336 nm)	0.72	19.83	85.08	12.15
PVK–Si monolithic tandem cell | top (336 nm)/bottom (150 μm)	2.02	20.11	81.36	33.05