Comparative device properties review of ZnO/Zn1−xMgxO MQWs LEDs and this work. All of the reported structure from references is n-ZnO/MQWs/p-ZnOa.
| Reference no. | 16 | 17 | 18 | 19 | This work |
|---|---|---|---|---|---|
| Turn-on voltage (V) | 3.2 | 7 | 2.2 | 4* | 3.5 |
| Turn-on current (mA) | 0.02* | # | 10* | # | 0.7 |
| Leakage current (mA) | 0.1*@4 V | 4* @20 V | # | # | 1.7@10 V |
| EL detectability threshold (V) | # | # | 7 | 6.2 | 5 |
| EL detectability current (mA) | 20 | # | 50* | 20 | 1 |
| Dominant EL peak (nm) | 380 | 380 | 385 | 380* | 372, 380 |
| FWHM of EL peak (nm) | 40*@40 mA | 0.4@20 mA laser | 50* | <20* | 7, 13@20 mA |
| ELMQWs/ELPN | 1.55 | # | # | 1.22* | 16 |
a
* values estimated using figures or data provided in the paper; # values which are neither available nor can be estimated from available data; ELMQWs and ELPN: integrated intensity for dominant EL peak from MQWs LEDs and their corresponding p–n junction LEDs without MQWs, ELMQWs/ELPN: the relative EL intensity value of LED with MQWs compared to the LED without MQWs.