Figure 1.

(a) Schematic of SWCNT filling and chirality sorting methodology. (b, d) AFM height and cross-section profiles of the (b) semiconducting and (d) metallic SWCNTs. Arrowed lines illustrate the positions and orientations of the profiles. The width of scanned areas were (b) 5 and (d) 2 μm. (c) ADF-STEM image showing an array of HgTe-filled SWCNTs encapsulated by zigzag chains observed in the semiconducting SWCNT sample. The adapted filtered detail I′ is enlarged from I, and the corresponding simulation (“SIM”) is based on the model, right. (e) As for (c) but two representative regions (EXP I and EXP II). Adaptive filtered versions of these images are shown in AF I and AF II, respectively. A detail from AF I is shown in II and then simulated (“SIM” below) according to the model, right. (f) Experimental ED pattern (top) of a bundle of reagglomerated HgTe-filled semiconducting SWCNTs (inset is the microstructure) with repeating 1D unit cell (lattice parameter a₀). SIM^–1 I and SIM^–1 II are FFTs of multislice simulations of models I (unfilled SWCNT bundle) and II (zigzag HgTe-filled bundle), respectively, imaged orthogonally to these end-on projections.