Fig. 4. Variation of a void structure formed from silicon atoms and volume fraction of cavity at high pressures.
a Volume fraction of >3.6 Å void radius structure at high pressures. b Volume fraction of cavity in SiO2 glass at high pressures. Green lines represent the volume fraction of the cavity of 0.445 (solid green line) and 0.464 (broken green line), corresponding to the random loose packing limit of equal spheres (0.555 (ref. 22) and 0.536 (ref. 23), respectively). c Change of void space formed from silicon atoms (Si void space) relative to the change of the bulk volume of SiO2 glass at high pressures. Source data are provided as a Source Data file.