Device performances of the ML GeSe and GeTe TFETs along the zigzag for HP and LP applications at the V_dd of 0.4–0.74 V. Here, L_g = 10 nm, EOT = 0.56 nm, N_S/N_D = 0.1/5 × 10¹³ cm⁻², and I_off = 0.1/1 × 10⁻⁴ μA μm⁻¹ for HP/LP application. I_on: on-state current; SS: subthreshold swing; τ: delay time; and PDP: power dissipation.

	V dd (V)	SS (mV dec−1)	I on (HP) (μA μm−1)	τ (HP) (ps)	PDP (HP) (fJ μm−1)	I on (LP) (μA μm−1)	τ (LP) (ps)	PDP (LP) (fJ μm−1)
GeSe	0.74	39	1715	0.027	0.021	1272	0.034	0.020
	0.65	38	1200	0.039	0.019	759	0.052	0.016
	0.55	37	829	0.057	0.016	444	0.069	0.011
	0.45	36	489	0.072	0.010	217	0.109	0.007
	0.4	37	355	0.096	0.009	156	0.135	0.005
GeTe	0.74	70	2342	0.037	0.041	—	—	—
	0.65	69	1699	0.046	0.032	—	—	—
	0.55	66	1135	0.055	0.021	—	—	—
	0.45	63	683	0.072	0.014	—	—	—
	0.4	58	512	0.086	0.011	—	—	—