Skip to main content
. 2022 Apr 29;12:7033. doi: 10.1038/s41598-022-11107-w

Figure 3.

Figure 3

(ad): The XRD patterns of the grown thin film of In2S3 at annealing temperature 550 °C with different pressures (a) 50 Torr (b) 100 Torr (c) 150 Torr, and (d) 200 Torr.