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. 2020 Nov 6;10(66):40467–40479. doi: 10.1039/d0ra06541b

Fig. 8. Dark current density–voltage (I–V) characteristics of Au/MZO/FTO thin film devices at different Mg doping: (a) 0, (b) 0.8, (c) 1.6, (d) 2.4, (e) 3.3, and (f) 4 mM. The inset showed the schematic illustration of Au/MZO/FTO devices structure with top contact.

Fig. 8