Deposition of four different substrates.
| (1) SiO2 40 nm | (2) Si3N4 40 nm | (3) SiO2 40 nm/Si3N4 30 nm | (4) Si3N4 40 nm/SiO2 30 nm | |
|---|---|---|---|---|
| Silane flow (sccm) | 5 | 20 | 5/20 | 20/5 |
| N2 flow (sccm) | 0 | 180 | 0/180 | 180/0 |
| NH3 flow (sccm) | 0 | 45 | 0/45 | 45/0 |
| N2O flow (sccm) | 80 | 0 | 80/0 | 0/80 |
| AC power (W) | 0 | 20 | 0/20 | 20/0 |
| HF power (W) | 30 | 160 | 30/160 | 160/30 |
| Temperature (°C) | 350 | 350 | 350/350 | 350/350 |
| Deposition time (s) | 20 | 45 | 20/34 | 45/15 |
| Pressure (mtorr) | 1200 | 1600 | 1200/1600 | 1600/1200 |