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. 2019 Jan 29;9(7):3828–3837. doi: 10.1039/c8ra10319d

Deposition of four different substrates.

(1) SiO2 40 nm (2) Si3N4 40 nm (3) SiO2 40 nm/Si3N4 30 nm (4) Si3N4 40 nm/SiO2 30 nm
Silane flow (sccm) 5 20 5/20 20/5
N2 flow (sccm) 0 180 0/180 180/0
NH3 flow (sccm) 0 45 0/45 45/0
N2O flow (sccm) 80 0 80/0 0/80
AC power (W) 0 20 0/20 20/0
HF power (W) 30 160 30/160 160/30
Temperature (°C) 350 350 350/350 350/350
Deposition time (s) 20 45 20/34 45/15
Pressure (mtorr) 1200 1600 1200/1600 1600/1200