Table 1. Summary of the parameters used in fabricating the two analyzers tested in this work.
| Energy (keV) | 11.2150 | 8.9808 |
| Analyzer crystal reflection | Si(844) | Ge(337) |
| Bragg angle (°) | 85.77 | 87.14 |
| Analyzer crystal intrinsic energy resolution (meV) | 14.6 | 36.5 |
| Incident energy resolution (meV) | 15 | 35 |
| Measured energy resolution (including the convolution of the intrinsic and geometrical contributions) (meV) | 29.4 | 56.6 |
| Pixel size (before etching) (mm × mm) | 1.55 × 1.55 | 1.55 × 1.55 |
| Analyzer illumination diameter opening (mm) | 100 | 100 |
| Bonding method between diced crystal and supporting wafer | Anodic bonding | Glue |
| Etching solution/etching time | 10% HNO3 + 90% HF / 10 min | 10% HNO3+ 90% HF / 10 min |