Fig. 2. (a) Atomic structure of few-layered MoS₂ under the gated electric field, (b) the change of the potential (solid line) in vertical direction through bilayer MoS₂ with S vacancy (S,1,1), under 0.5 V nm⁻¹ of gated field. Vertical cyan line indicated the position of MoS₂ layers. Vacancies are distributed: (c) when two layers contains vacancies, and (d) when only one layer contains vacancies.