Fig. 5. Potential change ΔV(z) = V_gated(z) − V_ungated(z), calculated along the z-axis to the calculated change in the dielectric constant of bilayer MoS₂ for (a) the intrinsic, (b) Mo vacancy (Mo–Mo,1–2,1–1), (c) S vacancy (S–S,1–2,1–1), and (d) (S,1,2) cases, for various interlayer distances.