Hopping energy and all on-site energies, taken from ref. 1–3 and 40–44 for graphene, SiC and h-BN simple bilayers.
| Lattice | t/eV | γ/eV | ε α /eV | ε β /eV |
|---|---|---|---|---|
| Graphene | 2.90 | 0.20 | 0 | 0 |
| SiC | 1.42 | 0.15 | 0 | −2.85 |
| h-BN | 1.95 | 0.17 | 0 | −4.57 |
| Lattice | t/eV | γ/eV | ε α /eV | ε β /eV |
|---|---|---|---|---|
| Graphene | 2.90 | 0.20 | 0 | 0 |
| SiC | 1.42 | 0.15 | 0 | −2.85 |
| h-BN | 1.95 | 0.17 | 0 | −4.57 |