Fig. 6. (a) The curvature-dependent laser-shiny area change of bending GaSe with different curvatures R−1 = 12.625, 17.373, 21.308, 27.594, and 30.276 m−1. The shiny area increases linearly with the bending curvature is increased. (b) The representative scheme of the Se–Ga–Ga–Se units for the GaSe monolayers illuminated by laser under flat condition and under upward bending. The bent GaSe received more photons as well as much widened emission solid angle with respect to those of the flat condition.
