Fig. 3. Summary plots of the transfer curve parameters ((a) hysteresis, (b) subthreshold swing and (c) mobility) of the a-IGZO TFTs with the ALD-Al₂O₃ gate insulators for T_dep = 150 °C (high hydrogen, HH) and 300 °C (low hydrogen, LH) according to the post-annealing temperature (T_post-ann = 200–400 °C).