Summary of TFT device performances.
| Sample/annealing temp. | μ h [μh_max]a (cm2 V−1 s−1) | V th (V) | I on/Ioff |
|---|---|---|---|
| PCZT (N/A) | 1.4 × 10−4 [1.7 × 10−4] | 13 | 102–103 |
| 100 °C | 1.1 × 10−4 [1.3 × 10−4] | −6 | 102–103 |
| 150 °C | 3.5 × 10−5 [4.2 × 10−5] | −10 | 102–103 |
| 250 °C | 1.4 × 10−4 [1.5 × 10−4] | −8 | 102–103 |
| 300 °C | 3.0 × 10 −4 [4.2 × 10 −4 ] | −8 | 102–103 |
| PCZTT (N/A) | 5.1 × 10−5 [5.3 × 10−5] | −7 | 101–102 |
| 150 °C | 1.8 × 10−4 [1.9 × 10−4] | −15 | 102–103 |
| 250 °C | 4.8 × 10−4 [5.1 × 10−4] | −30 | 102–103 |
| 300 °C | 1.4 × 10 −3 [1.8 × 10 −3 ] | −6 | 105–106 |
a
Mobility values are measured in air. The mobilities under optimized annealing conditions are indicated in boldface. The average values are calculated over 3 devices and the highest values are listed in parentheses.