Values of recombination parameters derived from CE/TPV measurements for devices with ZnO layer deposited by IJP, spin coating and thermal evaporation.

Parameter	ZnO-IJP	ZnO-SC	ZnO-TE
n 0	1.6 × 1015	1.4 × 1012	5.8 × 1011
γ	4.3	12.5	14.0
β	12.7	18.8	23.7
λ	2.99	1.5	1.7
ϕ (eqn (6))	3.99	2.5	2.7
ϕ (eqn (7))	3.95	2.5	2.69