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. 2018 May 23;8(34):18889–18895. doi: 10.1039/c8ra03047b

Bandgaps and bandedges of the heterojunctions at pH = 0.

Structure E g (eV) E VBM (eV) E CBM (eV) Bandgap Straddling water redox potentials
HfS2/h-BN 1.78 −6.51 −4.74 Direct No
HfS2/h-BN with −6% strain 0.62 −5.77 −5.14 Direct No
HfS2/h-BN with −3% strain 1.27 −6.21 −4.94 Direct No
HfS2/h-BN with 3% strain 2.03 −6.63 −4.60 Direct No
HfS2/h-BN with 6% strain 2.28 −6.71 −4.43 Direct Yes
HfS2/h-BN with 9% strain 2.52 −6.80 −4.28 Direct Yes
HfS2/g-C3N4 1.29 −7.19 −5.90 Direct No
HfS2/g-C3N4 with −6% strain 0.01 −5.34 −5.33 Direct No
HfS2/g-C3N4 with −3% strain 0.38 −5.60 −5.22 Direct No
HfS2/g-C3N4 with 3% strain 1.92 −6.65 −4.73 Indirect No
HfS2/g-C3N4 with 6% strain 2.29 −6.88 −4.59 Direct No
HfS2/g-C3N4 with 9% strain 2.72 −7.15 −4.43 Indirect Yes