The optimized bond distances (dint) between the interfacial atoms and the calculated adhesion energies for two different interfacial configurations studied here.
| Shape | d int (Å) | γ (Jm−2) |
|---|---|---|
| Si–Cd | 4.80 | 0.473 |
| Si–S | 4.55 | 0.957 |
| Shape | d int (Å) | γ (Jm−2) |
|---|---|---|
| Si–Cd | 4.80 | 0.473 |
| Si–S | 4.55 | 0.957 |