Fig. 1. (a) Schematic illustration of the Au/CuPc/P(VDF-TrFE) + PFO/ITO synaptic device. (b) Sketch of the operation mechanism of a polymeric ferroelectric interpenetrating network. Polarization of the ferroelectric phase leads to accumulation of charges in the organic semiconductor domain, which modulates the injection barrier of the semiconductor/electrode interface leading to the change of the device conductance. The positive (c) and negative (d) current–voltage characteristics of the synaptic device showing a distinctive history-dependent resistive switching behavior. The step width of voltage sweeps are 0.15 V and 0.06 V, respectively. Inset: an equivalent circuit model of the device.