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. 2018 Aug 24;8(52):30021–30039. doi: 10.1039/c8ra03281e

Mobility (μ) and hopping conductivity (σhop) at different electric field (E⃑) (or different electric field assisted site energy gap (ΔEext)) for hole and electron transport in TBBI, Me-TBBI, TIBN and Me-TIBN materials.

Molecule E⃑ (×104 V cm−1) Inline graphic meV μ (cm2 V−1 s−1) σ hop (×103 S cm−1)
TBBI (hole) 0 0.000 11.68 8.67
0.714 0.025 18.81 14.09
1.428 0.050 30.28 22.94
2.143 0.075 48.75 37.31
2.857 0.100 78.49 60.70
TBBI (electron) 0 0.000 0.38 2.02
0.714 0.025 0.61 3.34
1.428 0.050 1.00 5.52
2.143 0.075 1.61 8.50
2.857 0.100 2.61 13.88
Me-TBBI (hole) 0 0.000 8.60 5.83
0.714 0.025 13.85 9.37
1.428 0.050 22.30 15.58
2.143 0.075 35.89 24.07
2.857 0.100 57.78 38.94
Me-TBBI (electron) 0 0.000 0.33 1.94
0.714 0.025 0.54 3.10
1.428 0.050 0.88 5.14
2.143 0.075 1.43 8.10
2.857 0.100 2.33 13.17
TIBN (hole) 0 0.000 0.22 0.17
0.714 0.025 0.35 0.26
1.428 0.050 0.57 0.42
2.143 0.075 0.93 0.69
2.857 0.100 1.51 1.11
TIBN (electron) 0 0.000 0.24 1.35
0.714 0.025 0.39 2.19
1.428 0.050 0.63 3.56
2.143 0.075 1.02 6.09
2.857 0.100 1.64 9.91
Me-TIBN (hole) 0 0.000 0.48 0.36
0.714 0.025 0.78 0.59
1.428 0.050 1.26 0.95
2.143 0.075 2.04 1.56
2.857 0.100 3.30 2.53
Me-TIBN (electron) 0 0.000 0.26 1.46
0.714 0.025 0.42 2.38
1.428 0.050 0.69 3.86
2.143 0.075 1.12 6.43
2.857 0.100 1.82 10.45