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. 2022 May 10;12:7681. doi: 10.1038/s41598-022-11946-7

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© The Author(s) 2022

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Device fabrication: (a) A flow chart for fabrication process: (i) Material growth of InGaAs PIN PD, (ii) Deposition of Up-contact metal frame. (iii) Preparation of release holes array, (iv) Preparation of passivation layer, (v) Preparation of electrode protective layer, (vi) Peeling off the InGaAs PIN membranes, (vii) Deposition of bottom contact and transfer of devices. (b) Cross-sectional structure of a fabricated InGaAs PIN flexible PD based on ITO-PET flexible substrate.