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. 2018 Dec 14;8(73):41884–41891. doi: 10.1039/c8ra06230g

Fig. 3. (a) The forming voltage of Device 1, Device 2 and Device 3. The typical bipolar resistive switching characteristics of (b) Device 1, (c) Device 2 and (d) Device 3. The inset of (b–d) show the schematic diagram for Au/HfOx/HfO2/Pt.

Fig. 3