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. Author manuscript; available in PMC: 2022 Dec 1.
Published in final edited form as: Nat Protoc. 2021 Nov 26;16(12):5707–5738. doi: 10.1038/s41596-021-00631-0

Table 1 |.

Troubleshooting table

Step Problem Possible reason Solution

1A(xi) Patterned sizes are out of the tolerance The exposure time and development time are not optimized Spin SU-8 3050 on a dummy Si wafer and perform the dose test to find out the correct parameters
1A(xiv) The etching depth did not reach the target of 430 ± 10 μm Residual SU8 resist remained in the holes because of insufficient development time in Step1A(xii), or the etch rate is changed because of buildup of polymers in the chamber Use a Filmetric with a smaller beam size (≤10 μm) to measure thicknesses in the holes. If SU8 remains in the holes, etch it away with oxygen plasma. Alternatively, run an oxygen plasma cleaning and then continue etching the wafer until it reaches the target depth
1A(xv) SU8 is not etched The plasma tool setting is not optimized to remove the hard-baked SU8 Increasing the plasma power, chamber temperature and oxygen flow rate will increase the SU8 ashing rate
1A(xix) The alignment error is out of the tolerance The alignment marks are contaminated, and/ or there are particles on the backside Carefully wipe down the alignment marks using wet cleanroom papers with acetone followed by a nitrogen blow-dry until all the alignment marks can be seen clearly
1A(xxiii) Some of the hollow microchannels are blocked or not opened yet The etching time is not long enough, or contamination and particles exist in some holes Etch until the clogged channels are opened. Keeping the fabrication environment clean and avoiding contamination from particle sources are important
1A(xxix) The bore size is smaller than the target size after PECVD oxide deposition Over-deposited SiO2 layer Remove the coated oxide layer in hydrofluoric acid solution and redeposit the PECVD oxide layer (Step 1A(xxix)) to get the target bore size
9 and 13 The animal is agonal breathing Anesthesia is too deep, or the flow rate is not strong enough to circulate enough air Lower the isoflurane concentration or increase the air flow rate
20 No electric current (absence of convulsions) Electrical issue, chip blocked or loss of contact between the chip and the skin Check wires and connections, clean the chip through vigorous pipetting of water, use a new chip or maintain firm pressure on the chip against the skin
25A(vi) Low gene expression Not enough plasmid was delivered, or the plasmid was not transfected deeply enough Increase the plasmid concentration, or increase the number of pulses or the voltage