Table 3.
Comparison between the proposed Memristor design and the relevant Memristors presented in literature.
| Relevant TRNGs/PUFs designs in the literature | Performed NIST tests | Authors/references |
|---|---|---|
| Memristive read and write PUF | –N/A– | 28 |
| N-bit read and write Memristive PUF (M-PUF) | –N/A– | 29 |
| Hybrid memristor-CMOS PUF | –N/A– | 30 |
| Nanocrossbar memristor PUF | –N/A– | 26 |
| W/TiN/TiON/SiO2/Si memristor | –N/A– | 31 |
| Cu/AlOx and Ti/HfOx memristors | –N/A– | 32 |
| TaOx-based devices | All 15 NIST tests | 33 |
| (expensive quality bits generated) | ||
| Pt/Ag/Ag:SiO2/Pt memristor | All 15 NIST tests (complex device Structure) | 34 |
| (complex device Structure) | ||
| RRAM TRNGs | 12 NIST tests | 35 |
| Cu/HfOSi Memristor | All 15 combined with the literature | MR-PUF TRNG proposed in this paper |
| three additional tests using efficient and low cost structure |