Table 3.
Comparison between the proposed Memristor design and the relevant Memristors presented in literature.
Relevant TRNGs/PUFs designs in the literature | Performed NIST tests | Authors/references |
---|---|---|
Memristive read and write PUF | –N/A– | 28 |
N-bit read and write Memristive PUF (M-PUF) | –N/A– | 29 |
Hybrid memristor-CMOS PUF | –N/A– | 30 |
Nanocrossbar memristor PUF | –N/A– | 26 |
W/TiN/TiON/SiO2/Si memristor | –N/A– | 31 |
Cu/AlOx and Ti/HfOx memristors | –N/A– | 32 |
TaOx-based devices | All 15 NIST tests | 33 |
(expensive quality bits generated) | ||
Pt/Ag/Ag:SiO2/Pt memristor | All 15 NIST tests (complex device Structure) | 34 |
(complex device Structure) | ||
RRAM TRNGs | 12 NIST tests | 35 |
Cu/HfOSi Memristor | All 15 combined with the literature | MR-PUF TRNG proposed in this paper |
three additional tests using efficient and low cost structure |