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. 2022 May 23;12:8633. doi: 10.1038/s41598-022-11240-6

Table 3.

Comparison between the proposed Memristor design and the relevant Memristors presented in literature.

Relevant TRNGs/PUFs designs in the literature Performed NIST tests Authors/references
Memristive read and write PUF –N/A– 28
N-bit read and write Memristive PUF (M-PUF) –N/A– 29
Hybrid memristor-CMOS PUF –N/A– 30
Nanocrossbar memristor PUF –N/A– 26
W/TiN/TiON/SiO2/Si memristor –N/A– 31
Cu/AlOx and Ti/HfOx memristors –N/A– 32
TaOx-based devices All 15 NIST tests 33
(expensive quality bits generated)
Pt/Ag/Ag:SiO2/Pt memristor All 15 NIST tests (complex device Structure) 34
(complex device Structure)
RRAM TRNGs 12 NIST tests 35
Cu/HfO2-x/p++Si Memristor All 15 combined with the literature MR-PUF TRNG proposed in this paper
three additional tests using efficient and low cost structure