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. 2022 Apr 20;16(5):6960–7079. doi: 10.1021/acsnano.1c09150

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© 2022 The Authors. Published by American Chemical Society

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Voltage control of the magnetic properties of CrI₃, CGT and FGT. (a) Top: Normalized magnetization measured by MCD as a function of the applied electric field (trace and retrace) at 4 K and fixed magnetic field (+0.44 T for top panel and −0.44 T for bottom panel), showing the electrical switching of the magnetic order in bilayer CrI₃. The insets represent the corresponding magnetic states.⁸ Adapted with permission from ref (8). Copyright 2018 Springer Nature. (b) Uniaxial magnetic anisotropy field of multilayer CGT as a function of temperature at different gate voltages and in the pristine case. Inset: The dependence of T_C on gate voltage.⁸⁶ Adapted with permission from ref (86). Copyright 2020 Springer Nature. (c) T_C of a trilayer FGT as a function of gate voltage.¹² (d) H_C of a trilayer FGT as a function of gate voltage at 10 K.¹² Panels (c) and (d) are adapted with permission from ref (12). Copyright 2018 Springer Nature.

Inline graphic — Voltage control of the magnetic properties of CrI₃, CGT and FGT. (a) Top: Normalized magnetization measured by MCD as a function of the applied electric field (trace and retrace) at 4 K and fixed magnetic field (+0.44 T for top panel and −0.44 T for bottom panel), showing the electrical switching of the magnetic order in bilayer CrI₃. The insets represent the corresponding magnetic states.⁸ Adapted with permission from ref (8). Copyright 2018 Springer Nature. (b) Uniaxial magnetic anisotropy field of multilayer CGT as a function of temperature at different gate voltages and in the pristine case. Inset: The dependence of T_C on gate voltage.⁸⁶ Adapted with permission from ref (86). Copyright 2020 Springer Nature. (c) T_C of a trilayer FGT as a function of gate voltage.¹² (d) H_C of a trilayer FGT as a function of gate voltage at 10 K.¹² Panels (c) and (d) are adapted with permission from ref (12). Copyright 2018 Springer Nature.